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Fabrication And Characterization Of PVoso₄ (H₂O) /Psi Hetero Junction And Application In Solar Cell


Sarah A. K. Athari , Bahjat B. Kadhim , Ahmed N. Abd
Abstract

In this research, VOSO₄.H₂O thin films will produced by hydrothermal method. A nanocrystalline porous silicon (PS) films from P-type silicon wafer which synthesized via using ECE process of p-silicon wafer have orientation (100) with fixed current density (10 mA/cm²) and etching time (10 min), electrolyte dilute solution HF:C2H5OH (1:1). Atomic force microscopy (AFM) reveals the Nanopores to. Lowest effective reflectance was obtained by VOSO₄.H₂O/PSi thin film that display excellent light-trapping at wavelengths ranging from (200 to 900 nm). Solar cell designed construct on the PSi anti-reflection coating VOSO₄.H₂O layer. (I-V) properties of the solar cell were examined under (90mW/cm²) illumination. The energy gab was found about (4.2eV) By Ultraviolet (UVVis) spectrophotometer, the (Voc=40mV), short-circuit current was(Isc=105 , characterized of X-ray diffraction (XRD) analysis estimated crystallites size about nanoscale for PS layers after etching. The atomic force microscopy(AFM) measurement gives the average diameter of (45.92 nm) of VOSO₄.H₂O film ,surface roughness and RMS. This way of nanoparticles Fabrication by hydrothermal method was qualified ,easy, simple, and cheap.

Volume 12 | Issue 2

Pages: 2425-2431

DOI: 10.5373/JARDCS/V12I2/S20201290